Molecular Beam Epitaxy technology e mepụtara Bell Laboratories na mmalite 1970s na ndabere nke agụụ deposition usoro na Arthur si na-amụ na mmeghachi omume kinetics nke gallium dị ka atom mmekọrịta na GaAs elu na 1968. Ọ na-akwalite mmepe nke ọgbọ ọhụrụ nke sayensị semiconductor na. teknụzụ dabeere na ultrathin oyi akwa microstructure ihe. Molecular beam epitaxy (MBE) bụ teknụzụ ihe nkiri dị mkpa na-agbanwe agbanwe, nke enwere ike igosipụta dị ka imepụta ihe nkiri dị mkpa dị elu ma ọ bụ ihe dị iche iche achọrọ site na imepụta atom ma ọ bụ molekụla molekụla nke ikuku na-ekpo ọkụ na-abanye na mkpụrụ dị ọcha nwere ntụzịaka na ọnọdụ okpomọkụ. na ultra-high agụụ gburugburu ebe obibi.
Usoro nyocha nha ahịa nke molecular beam epitaxy (MBE).
Molecular beam epitaxial system bụ ngwa dị mkpa maka semiconductor na fotovoltaic ihe ọhụrụ na nyocha usoro. Ọnụ ahịa ahịa ụwa zuru ụwa ọnụ nke sistemu beam epitaxial ruru $ 81.48 nde na 2020, a na-atụkwa anya iru $ 111 nde na 2026, yana ọnụego uto kwa afọ (CAGR) nke 5.26%.
Europe bụ ugbu a n'ụwa kasị ukwuu mmepụta ebe nke ụyọkọ epitomized usoro, na mbupụ n'ọtụtụ mba n'ụwa, bụ nke tumadi ibubata site mbubata, ọ bụ ezie na e nwere ọnụ ọgụgụ dị nta nke emepụta na mmepụta ikike, ma ngwaahịa bụ ezughị ezu na ngwa ngwa mkpa. iji meziwanye uru ngwaahịa ahụ iji weghara ahịa. N'otu oge ahụ, na mmepe nke semiconductor na ihe onwunwe ụlọ ọrụ, ndị ahịa etinyela ọzọ àgwà chọrọ na elu oru egosi dị ka isi nnyocha na molekul doo epitaxy usoro nke mmepụta ngwá, na mgbanwe nkọwa na-aghọ ndị ọzọ na ọzọ iche iche. Ụlọ ọrụ sistemụ epitaxial molecular beam kwesịrị imeziwanye ogo ngwaahịa ahụ nke ọma, si otú ahụ mee ka ngwaahịa ya mara mma.
Isi molekụla coepitaxial usoro emepụta na ahịa na-agụnye American veecoc, riber na Finland dca, na ndị nkịtị ụdị molekụla fastipron ngwaahịa ndị ọzọ ngwaahịa, dị ka veeco, riber na sienta omicron, wdg The laser molekul beam epitaxial usoro emeputa tumadi gụnyere gụnyere. Japan pascaly, Netherlands TSST, wdg Ka ọ dị ugbu a, ụdị nkịtị ụdị molecular beam epitaxial system bụ isi ahịa ahịa, òkè ahịa bụ ihe dị ka 73%, a na-eji usoro epitaxial laser molecular beam eme ihe n'ọtụtụ ebe n'ihi ihe nkiri ahụ dabara adaba maka ya. uto nke polyelement, ebe mgbaze dị elu na nhazi oyi akwa dị mgbagwoju anya.
A na-eji usoro epitaxy molecular beam eme ihe na nyocha nke semiconductor na ihe ndị bụ isi. Ndị na-azụ ahịa nke sistemu cluster epitaxy bụ obodo nwere usoro nrụpụta ihe zuru oke, dịka Europe, United States, Japan na China, nke na-akpata ihe karịrị pasenti 80 nke ahịa ụwa. N'otu oge ahụ, mba ndị na-emepe emepe dị ka India, Ndịda Ebe Ọwụwa Anyanwụ Eshia na afọ ndị ọzọ na-adịbeghị anya ejiriwokwa nwayọọ nwayọọ kwalite itinye ego na ngalaba nyocha, ọdịnihu ga-enwekwa ikike ịzụ ahịa ka ukwuu.
Mgbasa zuru ụwa ọnụ nke akụ na ụba ụwa anọwo n'akụkụ n'ihi mmepe nke akụ na ụba ụwa na semiconductor, nke siri ike ikwe nkwa na ikike ụlọ ọrụ na ahịa ala ala, nke mekwara ka ọ bụrụ ihe isi ike na mmepụta nke otu ìgwè. microexpanses, dị ka mbelata nke ahịa ụlọ ọrụ na ọkara mbụ nke afọ na ọkara mbụ nke afọ, ya mere ụlọ ọrụ ahụ kwesịrị ịnọgide na-enwe usoro ego zuru oke iji nagide mmepe nke ntiwapụ ahụ. Ọ bụ ezie na nsogbu gburugburu ebe obibi na nsogbu asọmpi ụlọ ọrụ dị, anyị kwenyere na echiche ahịa nke ụlọ ọrụ ụlọ akụ ka bụ atụmanya mmepe ụfọdụ, na ntinye ego nke ụlọ ọrụ ahụ ga-anọgide na-abawanye.
MBE Liquid Nitrogen Cooling Circulation System
Ngwa MBE kwesịrị ịdị elu na ngwa ngwa, ya mere ụlọ ahụ kwesịrị ka ọ dị jụụ. HL nwere usoro ngwọta ikuku nitrogen zuru oke zuru oke.
Na mmiri mmiri nitrogen mma mgbasa usoro nwere, agụụ mkpuchi mkpuchi (VI) ọkpọkọ, VI mgbanwe hoses, VI valves, VI mgbasa nkewa separator wdg.
Ngwa HL Cryogenic
HL Cryogenic Equipment nke tọrọ ntọala na 1992 bụ akara ejikọtara na Chengdu Holy Cryogenic Equipment Company na China. Akụrụngwa HL Cryogenic agbadoro aka na imepụta na nrụpụta nke Sistemụ ọkpọkọ mkpuchi mkpuchi Cryogenic dị elu yana ngwa nkwado metụtara ya.
Maka ozi ọzọ, biko gaa na ukara websitewww.hlcryo.com, ma ọ bụ email nainfo@cdholy.com.
Oge nzipu: Jul-20-2022
