Molecular Beam Epitaxy technology e mepụtara Bell Laboratories na mmalite 1970 na ndabere nke agụụ deposition usoro na Arthur si na-amụ na mmeghachi omume kinetics nke gallium dị ka atom mmekọrịta na GaAs elu na 1968. Ọ na-akwalite mmepe nke ọhụrụ ọgbọ nke semiconductor sayensị na nkà na ụzụ dabeere na ultrathin oyi akwa microstructure ihe. Molecular beam epitaxy (MBE) bụ teknụzụ ihe nkiri dị nro na-agbanwe agbanwe, nke enwere ike igosipụta dị ka imepụta ihe nkiri dị mkpa dị elu ma ọ bụ ihe dị iche iche achọrọ site na imepụta atom ma ọ bụ ahịhịa molekụla nke ikuku ikuku na-emepụta na mkpụrụ dị ọcha nke nwere ntụzịaka na ọnọdụ okpomọkụ na gburugburu oghere dị elu.
Usoro nyocha nha ahịa nke molecular beam epitaxy (MBE).
Molecular beam epitaxial system bụ ngwa dị mkpa maka semiconductor na fotovoltaic ihe ọhụrụ na nyocha usoro. Ọnụ ahịa ahịa ụwa zuru ụwa ọnụ nke sistemu beam epitaxial ruru $ 81.48 nde na 2020, a na-atụkwa anya iru $ 111 nde na 2026, yana ọnụego uto kwa afọ (CAGR) nke 5.26%.
Europe bụ ugbu a n'ụwa kasị ukwuu mmepụta ebe nke ụyọkọ epitomized usoro, na-ebupụ n'ọtụtụ mba n'ụwa, nke na-tumadi mbubata site mbubata, ọ bụ ezie na e nwere ọnụ ọgụgụ dị nta nke emepụta na mmepụta ikike, ma ngwaahịa bụ ezughị ezu na ngwa ngwa chọrọ ka melite uru nke ngwaahịa weghara ahịa. N'otu oge ahụ, na mmepe nke semiconductor na ihe onwunwe ụlọ ọrụ, ndị ahịa etinyela ọzọ àgwà chọrọ na elu oru egosi dị ka isi nnyocha na molekụla doo epitaxy usoro nke mmepụta ngwá, na mgbanwe nkọwa na-aghọwanye iche iche. Ụlọ ọrụ sistemụ epitaxial molecular beam kwesịrị imeziwanye ogo ngwaahịa ahụ nke ọma, si otú ahụ mee ka ngwaahịa ya mara mma.
Ndị isi molecular coepitaxial system emepụta na ahịa gụnyere American veecoc, riber na Finland dca, na ndị nkịtị ụdị molekụla fastipron ngwaahịa ndị ọzọ ngwaahịa, dị ka veeco, riber na sienta omicron, wdg The laser molecular beam epitaxial usoro emeputa tumadi gụnyere Japan pascaly, na Netherlands TSST, wdg ugbu a, ahịa bụ ụdị ahịa epixi bụ isi ahịa ahịa nke Netherlands TSST, wdg. ihe dị ka 73%, a na-eji usoro epitaxial laser molecular beam eme ihe n'ọtụtụ ebe n'ihi ihe nkiri ahụ kwesịrị ekwesị maka uto nke polyelement, ebe mgbaze dị elu na nhazi oyi akwa dị mgbagwoju anya.
A na-eji usoro epitaxy molecular beam eme ihe na nyocha nke semiconductor na ihe ndị bụ isi. Ndị na-azụ ahịa nke sistemu cluster epitaxy bụ obodo nwere usoro nrụpụta ihe zuru oke, dịka Europe, United States, Japan na China, nke na-akpata ihe karịrị pasenti 80 nke ahịa ụwa. N'otu oge ahụ, mba ndị na-emepe emepe dị ka India, Ndịda Ebe Ọwụwa Anyanwụ Eshia na afọ ndị ọzọ na-adịbeghị anya ejiriwokwa nwayọọ nwayọọ kwalite itinye ego na ngalaba nyocha, ọdịnihu ga-enwekwa ikike ịzụ ahịa ka ukwuu.
Mgbasa ụwa zuru ụwa ọnụ nke akụ na ụba ụwa bụ akụkụ n'ihi mmepe nke akụ na ụba ụwa na semiconductor, nke siri ike ikwenye na ikike nke ụlọ ọrụ na ahịa ala, nke butere ụfọdụ ihe isi ike na mmepụta nke otu microexpanses, dị ka mbelata nke ire ụlọ ọrụ na ọkara mbụ nke afọ na ọkara mbụ nke afọ, yabụ ụlọ ọrụ ahụ kwesịrị ịnọgide na-enwe ọganihu ego zuru oke. Ọ bụ ezie na nsogbu gburugburu ebe obibi na nsogbu asọmpi ụlọ ọrụ dị, anyị kwenyere na echiche ahịa nke ụlọ ọrụ ụlọ akụ ka bụ atụmanya mmepe ụfọdụ, na ntinye ego nke ụlọ ọrụ ahụ ga-anọgide na-abawanye.
MBE Liquid Nitrogen Cooling Circulation System
Ngwa MBE kwesịrị ịdị elu na ngwa ngwa, ya mere ụlọ ahụ kwesịrị ka ọ dị jụụ. HL nwere usoro ngwọta ikuku nitrogen zuru oke zuru oke.
Na mmiri mmiri nitrogen mma mgbasa usoro nwere, agụụ mkpuchi mkpuchi (VI) ọkpọkọ, VI mgbanwe hoses, VI valves, VI mgbasa nkewa separator wdg.
Ngwa HL Cryogenic
HL Cryogenic Equipment nke tọrọ ntọala na 1992 bụ akara ejikọtara na Chengdu Holy Cryogenic Equipment Company na China. Akụrụngwa HL Cryogenic agbadoro aka na imepụta na nrụpụta nke Sistemụ ọkpọkọ mkpuchi mkpuchi Cryogenic dị elu yana ngwa nkwado metụtara ya.
Maka ozi ọzọ, biko gaa na ukara websitewww.hlcryo.com, ma ọ bụ email nainfo@cdholy.com.
Oge nzipu: Jul-20-2022
